DS1350W
10. All AC and DC electrical characteristics are valid over the full operating temperature range. For
commercial products, this range is 0°C to 70°C. For industrial products (IND), this range is -40°C to
+85°C.
11. In a power-down condition the voltage on any pin may not exceed the voltage on V CC .
12. t WR1 and t DH1 are measured from WE going high.
13. t WR2 and t DH2 are measured from CE going high.
14. RST and BW are open-drain outputs and cannot source current. External pullup resistors should be
connected to these pins for proper operation. Both pins will sink 10 mA.
15. DS1350 modules are recognized by Underwriters Laboratories (UL) under file E99151.
DC TEST CONDITIONS
Outputs Open
Cycle = 200ns for operating current
All voltages are referenced to ground
AC TEST CONDITIONS
Output Load: 100pF + 1TTL Gate
Input Pulse Levels: 0 to 2.7V
Timing Measurement Reference Levels
Input: 1.5V
Output: 1.5V
Input pulse Rise and Fall Times: 5ns
ORDERING INFORMATION
PART
DS1350WP-100+
DS1350WP-100IND+
TEMP RANGE
0°C to +70°C
-40°C to +85°C
SUPPLY
TOLERANCE
3.3V ± 0.3V
3.3V ± 0.3V
PIN-PACKAGE
34 PCAP*
34 PCAP*
+ Denotes a lead(Pb)-free/RoHS-compliant package.
* DS9034PC+ or DS9034PCI+ (PowerCap) required. Must be ordered separately.
PACKAGE INFORMATION
For the latest package outline information and land patterns, go to www.maxim-ic.com/packages . Note
that a “+”, “#”, or “-” in the package code indicates RoHS status only. Package drawings may show a
different suffix character, but the drawing pertains to the package regardless of RoHS status.
PACKAGE TYPE
34 PCAP
PACKAGE CODE
PC2+5
OUTLINE NO.
21-0246
LAND
PATTERN NO.
9 of 10
相关PDF资料
DS1350YP-70IND+ IC NVSRAM 4MBIT 70NS 34PCM
DS1609-50+ IC SRAM 2KBIT 50NS 24DIP
DS2016R-100+ IC SRAM 16KBIT 100NS 24SOIC
DS2030L-100# IC NVSRAM 256KBIT 100NS 256BGA
DS2030W-100# IC NVSRAM 256KBIT 100NS 256BGA
DS2030Y-70# IC NVSRAM 256KBIT 70NS 256BGA
DS2045L-100# IC NVSRAM 1MBIT 100NS 256BGA
DS2045W-100# IC NVSRAM 1MBIT 100NS 256BGA
相关代理商/技术参数
DS1350WP-150 功能描述:NVRAM 3.3V 4096K NV SRAM w/Battery Monitor RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube
DS1350WP-150+ 功能描述:NVRAM 3.3V 4096K NV SRAM w/Battery Monitor RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube
DS1350WP-150IND 功能描述:IC NVSRAM 4MBIT 150NS 34PCM RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:150 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:2.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-VFDFN 裸露焊盘 供应商设备封装:8-DFN(2x3) 包装:管件 产品目录页面:1445 (CN2011-ZH PDF)
DS1350WP-150-IND 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:3.3V 4096K Nonvolatile SRAM with Battery Monitor
DS1350Y 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:4096k Nonvolatile SRAM with Battery Monitor
DS1350Y/AB 制造商:未知厂家 制造商全称:未知厂家 功能描述:4096k Nonvolatile SRAM with Battery Monitor
DS1350Y-70 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:4096k Nonvolatile SRAM with Battery Monitor
DS1350YL-100 功能描述:IC NVSRAM 4MBIT 100NS 34LPM RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:150 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:2.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-VFDFN 裸露焊盘 供应商设备封装:8-DFN(2x3) 包装:管件 产品目录页面:1445 (CN2011-ZH PDF)